Millimeter-wave power amplifiers using the multigate-cell are presented which operate over the 25-35 GHz band and achieve 300 mW of saturated output power and peak power-added efficiency (PAE) of 30% in 45 nm CMOS SOI technology.
Millimeter-wave power amplifiers using the multigate-cell are presented which operate over the 25-35 GHz band and achieve 300 mW of saturated output power and peak power-added efficiency (PAE) of
Search form. Search . Multigate-Cell Stacked FET Design for Millimeter-Wave CMOS Power Amplifiers
The design of linear-mode power amplifiers (PAs) generally involves similar matching principles than small-signal amplifiers, with the exception that a power-matched output that does not seem to
Index Terms—CMOS, power ampliﬁer (PA), millimeter-wave integrated circuits, stacked power ampliﬁer, 15 GHz band, 5G transmitters. The circuit schematic of the three stage multigate-cell stacked CMOS power ampliﬁer. II. CIRCUIT ARCHITECTURE ANDDESIGN compact stacked FET power ampliﬁer design can be realized based on
New citations to this author. Multigate-cell stacked FET design for millimeter-wave CMOS power amplifiers. JA Jayamon, JF Buckwalter, PM Asbeck. 15 GHz 25 dBm multigate-cell stacked CMOS power amplifier with 32% PAE and≥ 30 dB gain for 5G applications. N Rostomyan, JA Jayamon, P …
Abstract: Stacked field-effect transistor (FET) CMOS millimeter-wave power amplfiers (PAs) are studied with a focus on design of appropriate complex impedances between the transistors. The stacking of multiple FETs allows increasing the supply voltage, which, in turn, allows higher output power and a broader bandwidth output matching network.
A number of 60 GHz CMOS power amplifiers have been reported to date [11-19], however the output power has been relatively low, limiting the amplifiers to short-range applications.
Fig. 1. (a) Stacked CMOS Class-E-like PAs with voltage swings annotated E-like PAs at millimeter-wave frequencies will be discussed later in this paper. In order to conform to the peak AC swing High Power, High Efficiency Stacked mmWave Class-E-like Power Amplifiers in 45nm SOI CMOS
Multigate-Cell Stacked FET Design for Millimeter-Wave CMOS Power Amplifiers. IEEE Journal of Solid-State Circuits. 51:2027-2039. Jayamon J.A , Buckwalter J.F , Asbeck P.M .